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IRG4PC50UPBF |
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| Part Number | IRG4PC50UPBF |
| Manufacturer | International Rectifier |
| Description | PD -95186 INSULATED GATE BIPOLAR TRANSISTOR IRG4PC50UPbF UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • ... |
| Features |
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free C G E n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's VCES = 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Absolute Maximum Ratings VCES IC @ TC = 25... |
| Document |
 IRG4PC50UPBF Data Sheet
PDF 631.53KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRG4PC50U |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 2 | IRG4PC50UD |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 3 | IRG4PC50UDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | IRG4PC50F |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 5 | IRG4PC50F-EPBF |
International Rectifier |
Fast Speed IGBT |
|
| 6 | IRG4PC50FD |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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