BUK661R8-30C NXP N-channel TrenchMOS intermediate level FET Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

BUK661R8-30C

NXP
BUK661R8-30C
BUK661R8-30C BUK661R8-30C
zoom Click to view a larger image
Part Number BUK661R8-30C
Manufacturer NXP (https://www.nxp.com/)
Description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the app...
Features
 AEC Q101 compliant
 Suitable for standard and logic level gate drive sources
 Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications
 12 V Automotive systems
 Electric and electro-hydraulic power steering
 Motors, lamps and solenoid control
 Start-Stop micro-hybrid applications
 Transmission control
 Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Quick reference data Parameter drain-source voltage drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Cond...

Document Datasheet BUK661R8-30C Data Sheet
PDF 172.99KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 BUK661R8-30C
nexperia
N-channel MOSFET Datasheet
2 BUK661R6-30C
nexperia
N-channel TrenchMOS intermediate level FET Datasheet
3 BUK661R6-30C
NXP
N-channel TrenchMOS intermediate level FET Datasheet
4 BUK661R9-40C
nexperia
N-channel TrenchMOS intermediate level FET Datasheet
5 BUK661R9-40C
NXP Semiconductors
N-Channel MOSFET Datasheet
6 BUK6610-75C
NXP Semiconductors
N-channel TrenchMOS FET Datasheet
More datasheet from NXP
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad