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CHA3666-FAA |
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| Part Number | CHA3666-FAA |
| Manufacturer | United Monolithic Semiconductors |
| Description | The CHA3666-FAA is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air... |
| Features |
■ Broadband performance 6-16GHz ■ 1.8dB typical Noise Figure ■ 24dBm 3rd order intercept point ■ 16dBm power at 1dB compression ■ 21dB gain ■ Low DC power consumption ■ 6x6mm² metal ceramic hermetic package Linear Gain (dB) 30 25 20 15 10 +25 C +85 C -40 C 5 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Frequency (GHz) Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 6 16 GHz NF Noise figure 1.8 2.5 dB G Small signal Gain 18.5 21 dB IP3 3rd order intercept point 24 dBm ESD Protections: Electrostatic discharge sensitiv... |
| Document |
 CHA3666-FAA Data Sheet
PDF 468.73KB |
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