WFB33N25 |
Part Number | WFB33N25 |
Manufacturer | Wisdom technologies |
Description | This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche ... |
Features |
■ RDS(on) (Max 0.094 Ω )@VGS=10V ■ Gate Charge (Typical 37nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control. Symbol 1. Gate{ { ... |
Document |
WFB33N25 Data Sheet
PDF 106.25KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | WFB |
Allied Components International |
Wound Ferrite Beads | |
2 | WFB44N25 |
Wisdom technologies |
N-Channel MOSFET | |
3 | WF-0005 |
Microlab |
Finned Dummy Loads | |
4 | WF-0025 |
Microlab |
Finned Dummy Loads | |
5 | WF-0035 |
Microlab |
Finned Dummy Loads | |
6 | WF-0045 |
Microlab |
Finned Dummy Loads |