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SQM120N10-09 |
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| Part Number | SQM120N10-09 |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | OF CHANGE S15-1875-Rev. C, 10-Aug-15 7 Document Number: 71515 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCR... |
| Features |
• TrenchFET® power MOSFET • Package with low thermal resistance • AEC-Q101 qualified d • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Top View S D G G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a TC = 25 °C a TC = 125 °C Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH Maximum Power Dissipation b ... |
| Document |
 SQM120N10-09 Data Sheet
PDF 223.22KB |
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