BLF10M6160 |
Part Number | BLF10M6160 |
Manufacturer | NXP (https://www.nxp.com/) |
Description | 160 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test ci... |
Features |
Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (700 MHz to 1000 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3 Applications RF power amplifiers for ISM applications in the 700 MHz to 1000 MHz frequency range NXP Semiconductors BLF10M6160; BLF10M6LS160 Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description BLF10M6160 (SOT502A) 1 drain 2 gate 3 source BLF10M6LS160 (SOT502... |
Document |
BLF10M6160 Data Sheet
PDF 136.03KB |
Similar Datasheet
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---|---|---|---|---|
1 | BLF10M6160 |
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Power LDMOS transistor | |
2 | BLF10M6135 |
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3 | BLF10M6135 |
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4 | BLF10M6200 |
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5 | BLF10M6200 |
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6 | BLF10M6LS135 |
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