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CEP02N65G |
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| Part Number | CEP02N65G |
| Manufacturer | CET |
| Description | CEP02N65G/CEB02N65G CEF02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N65G CEB02N65G CEF02N65G VDSS 650V 650V 650V RDS(ON) 5.5Ω 5.5Ω 5.5Ω ID @VGS 2A 10V 2A 10V 2A d ... |
| Features |
Type CEP02N65G CEB02N65G CEF02N65G
VDSS 650V 650V
650V
RDS(ON) 5.5Ω 5.5Ω
5.5Ω
ID @VGS 2A 10V 2A 10V 2A d 10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
DG
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit TO-220/263 TO-220F
Drain-Source Voltage Gate-Source Voltage
VDS 650
VGS ±30
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
Drain Current-Pulsed a
ID IDM e
2 2d 1 1d 8 8d
M... |
| Document |
 CEP02N65G Data Sheet
PDF 390.52KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | CEP02N65A |
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N-Channel Enhancement Mode Field Effect Transistor |
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| 2 | CEP02N65D |
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| 6 | CEP02N7 |
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Desde 2024. D4U Semiconductor.
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