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SBE812 |
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| Part Number | SBE812 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | Ordering number : EN8966A SBE812 Schottky Barrier Diode 60V, 1A, Low IR, Non-Monolithic Dual VEC8 Common Cathode http://onsemi.com Applications • High frequency rectification (switching regulators, ... |
| Features |
• Small switching noise • Low leakage current and high reliability due to highly reliable planar structure • Ultrasmall package allows applied sets to be made small and thin Specifications Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Symbol Conditions Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature VRRM VRSM IO IFSM Tj 50Hz sine wave, 1 cycle Storage Temperature Tstg Ratings 60 65 1.0 10 --55 to +125 --55 to +125 Unit V V A A °C °C Stresses exceeding Maximum Ratings may d... |
| Document |
 SBE812 Data Sheet
PDF 228.13KB |
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