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MTB55N06Z |
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| Part Number | MTB55N06Z |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | MTB55N06Z Preferred Device Power MOSFET 55 Amps, 60 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This high energy device ... |
| Features |
el.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
VDSS
60
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
VDGR
60
Gate−to−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms)
VGS VGSM
± 20 ± 40
Drain Current − Continuous @ TC = 25°C − Continuous @ TC = 100°C − Single Pulse (tp ≤ 10 μs)
ID 55 ID 35.5 IDM 165
Total Power Dissipation @ TC = 25°C Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1.)
PD 113 0.91 2.5
Unit Vdc Vdc
Vdc Vpk
Adc
Apk Watts W/°C
Operating and Storage Temperature Range
TJ, Tstg
− 55 to 150
°C
Single... |
| Document |
 MTB55N06Z Data Sheet
PDF 179.05KB |
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Desde 2024. D4U Semiconductor.
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