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MTB36N06V |
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| Part Number | MTB36N06V |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | MTB36N06V Preferred Device Power MOSFET 32 Amps, 60 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high ... |
| Features |
VGSM
ID ID IDM PD
60 Vdc 60 Vdc
± 20 ± 25
32 22.6 112
90 0.6 3.0
Vdc Vpk Adc
Apk Watts W/°C Watts
Operating and Storage Temperature Range
TJ, Tstg
− 55 to 175
°C
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 32 Apk, L = 0.1 mH, RG = 25 Ω)
EAS
205 mJ
Thermal Resistance − Junction to Case − Junction to Ambient − Junction to Ambient (Note 1.)
RθJC RθJA RθJA
°C/W 1.67 62.5 50
Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 seconds
TL
260 °C
1. When surface mounted to an FR4 board using the minimum r... |
| Document |
 MTB36N06V Data Sheet
PDF 254.57KB |
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Desde 2024. D4U Semiconductor.
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