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IRFR120Z |
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| Part Number | IRFR120Z |
| Manufacturer | International Rectifier |
| Description | Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of t... |
| Features |
● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax G PD - 94754 IRFR120Z IRFU120Z HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 190mΩ ID = 8.7A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to ... |
| Document |
 IRFR120Z Data Sheet
PDF 204.76KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFR120 |
International Rectifier |
POWER MOSFET |
|
| 2 | IRFR120 |
Intersil Corporation |
N-Channel Power MOSFETs |
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| 3 | IRFR120 |
Vishay Siliconix |
Power MOSFET |
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| 4 | IRFR1205 |
International Rectifier |
Power MOSFET |
|
| 5 | IRFR1205 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IRFR1205PBF |
International Rectifier |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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