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IXTH02N250 |
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| Part Number | IXTH02N250 |
| Manufacturer | IXYS |
| Description | High Voltage Power MOSFETs IXTH02N250 IXTV02N250S N-Channel Enhancement Mode Fast Intrinsic Diode VDSS = ID25 = ≤RDS(on) 2500V 200mA 450Ω TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ ... |
| Features |
z Fast Intrinsic Diode z Low Package Inductance
Advantages z Easy to Mount z Space Savings
Applications
z High Voltage Power Supplies z Capacitor Discharge z Pulse Circuits
© 2013 IXYS CORPORATION, All Rights Reserved
DS100187E(04/13)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs VDS = 100V, ID = 0.5 • ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 100Ω (External) Qg(on) Qgs Qgd VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RthJC RthCS Characteristic Val... |
| Document |
 IXTH02N250 Data Sheet
PDF 195.82KB |
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