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EPC1005 |
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| Part Number | EPC1005 |
| Manufacturer | EPC |
| Description | DATASHEET EPC1005 – Enhancement Mode Power Transistor VDSS , 60 V RDS(ON) , 7 mW ID , 25 A EPC1005 EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard ... |
| Features |
BVDSS
Drain-to-Source Voltage
IDSS Drain Source Leakage
IGSS
Gate-Source Forward Leakage Gate-Source Reverse Leakage
VGS(th) RDS(ON)
Gate Threshold Voltage Drain-Source On Resistance
TEST CONDITIONS
VGS = 0 V, ID = 300 µA VDS = 48 V, VGS = 0 V
VGS = 5 V VGS = -5 V VDS = VGS, ID = 5 mA VGS = 5 V, ID = 25 A
Dynamic Characteristics (TJ= 25˚C unless otherwise stated) CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance QG Total Gate Charge (VGS = 5 V) QGD Gate to Drain Charge QGS Gate to Source Charge QOSS Output Charge QRR Source-Drain Recovery Charge
VDS = ... |
| Document |
 EPC1005 Data Sheet
PDF 304.70KB |
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Desde 2024. D4U Semiconductor.
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