SCH2830 |
Part Number | SCH2830 |
Manufacturer | Sanyo |
Description | Ordering number : ENA0861 SCH2830 SANYO Semiconductors DATA SHEET SCH2830 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • C... |
Features |
• Composite type with a P-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 1.8V drive. • [SBD] • Short reverse recovery time. • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Symbol VDSS VGSS... |
Document |
SCH2830 Data Sheet
PDF 59.84KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SCH2805 |
ON Semiconductor |
P-Channel Silicon MOSFET | |
2 | SCH2806 |
Sanyo Semicon Device |
General-Purpose Switching Device Applications | |
3 | SCH2809 |
ON Semiconductor |
P-Channel Silicon MOSFET | |
4 | SCH2812 |
Sanyo Semicon Device |
General-Purpose Switching Device Applications | |
5 | SCH2816 |
Sanyo Semicon Device |
General-Purpose Switching Device Applications | |
6 | SCH2817 |
Sanyo Semicon Device |
General-Purpose Switching Device Applications |