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C4953 |
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| Part Number | C4953 |
| Manufacturer | Panasonic |
| Description | Power Transistors 2SC4953 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2 3.0±0.5 ■ Features • High-speed switching φ 3... |
| Features |
• High-speed switching φ 3.2±0.1 15.0±0.5 • High collector-base voltage (Emitter open) VCBO • Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: > 5 kV 1.4±0.2 1.6±0.2 2.6±0.1 / ■ Absolute Maximum Ratings Ta = 25°C 0.8±0.1 0.55±0.15 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 500 13.7±0.2 4.2±0.2 Solder Dip V c e. d ty Collector-emitter voltage (E-B short) VCES 500 V n d stag tinue Collector-emitter voltage (Base open) VCEO 400 V a e cle con Emitter-bas... |
| Document |
 C4953 Data Sheet
PDF 217.77KB |
Desde 2024. D4U Semiconductor.
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