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IXTQ160N085T |
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| Part Number | IXTQ160N085T |
| Manufacturer | IXYS |
| Description | Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 160N085T IXTA 160N085T IXTP 160N085T VDSS = ID25 = =RDS(on) 85 V 160 A 6.0 mΩ TO-3P (IXTQ) Symbol Test Con... |
| Features |
z International standard packages z Unclamped Inductive Switching (UIS)
rated z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount z Space savings z High power density
© 2005 IXYS All rights reserved
DS99347(02/05)
Symbol
g fs
Ciss Coss Crss td(on) tr td(off) tf Q
g(on)
Qgs Q
gd
RthJC RthCK
IXTA 160N085T IXTP 160N085T IXTQ 160N085T
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
V = 10 V; I = 50A, pulse test DS D
64 85
S
VGS = 0 V, VDS = 25 V, f = 1 MHz
6400 927 92
pF pF pF
VGS = 10 V, VDS = 60 V, ID = 35A... |
| Document |
 IXTQ160N085T Data Sheet
PDF 131.25KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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