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SUP60N02-4m5P |
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| Part Number | SUP60N02-4m5P |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | SUP60N02-4m5P Vishay Siliconix N-Channel 20-V (D-S) 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 0.0045 at VGS = 10 V 20 0.0065 at VGS = 4.5 V ID (A)a 60 60 TO-220AB FEATURES • Trench... |
| Features |
• TrenchFET® Power MOSFET • 175 °C Junction Temperature • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • OR-ing D RoHS COMPLIANT DRAIN connected to TAB G GD S Top View Ordering Information: SUP60N02-4m5P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 100 °C ID Pulsed Drain Current IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TA = 25 °Cd PD ... |
| Document |
 SUP60N02-4m5P Data Sheet
PDF 102.74KB |
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Desde 2024. D4U Semiconductor.
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