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QM3016M3 |
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| Part Number | QM3016M3 |
| Manufacturer | UBIQ |
| Description | The QM3016M3/N3 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . ... |
| Features |
z Advanced high cell density Trench technology
zd Super Low Gate Charge
z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available
Absolute Maximum Ratings
Pin Configuration D
D
S SS G QM3016M3in
S S SG QM3016N3in
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃ ID@TA=25℃
IDM EAS IAS PD@TC=25℃ TSTG
TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4
Storage Temperature Rang... |
| Document |
 QM3016M3 Data Sheet
PDF 305.81KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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