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K2885 |
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| Part Number | K2885 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK2885(L), 2SK2885(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK D G S ADE-2... |
| Features |
• Low on-resistance RDS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK D G S ADE-208-545 A 2nd. Edition 44 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2885(L), 2SK2885(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings 30 ±20 45 180 45 75 150 –55 to +150 ... |
| Document |
 K2885 Data Sheet
PDF 37.59KB |
Desde 2024. D4U Semiconductor.
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