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IPI030N10N3G |
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| Part Number | IPI030N10N3G |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | IPP030N10N3 G IPI030N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(o... |
| Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPP030N10N3 G IPI030N10N3 G 100 V 3 mW 100 A Package Marking PG-TO220-3 030N10N PG-TO262-3 030N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C2) T C=100 °C Puls... |
| Document |
 IPI030N10N3G Data Sheet
PDF 529.98KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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