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IPI029N06N |
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| Part Number | IPI029N06N |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for t... |
| Features |
• Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 IPI029N06N Product Summary VDS RDS(on),max ID QOSS QG(0V..10V) 60 V 2.9 mW 100 A 65 nC 56 nC PG-TO262-3 Type IPI029N06N Package PG-TO262-3 Marking 029N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C 10... |
| Document |
 IPI029N06N Data Sheet
PDF 572.21KB |
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Desde 2024. D4U Semiconductor.
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