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30J324 |
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| Part Number | 30J324 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode... |
| Features |
and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance (IGBT) Thermal resistance (diode)
Symbol
R... |
| Document |
 30J324 Data Sheet
PDF 210.33KB |
Desde 2024. D4U Semiconductor.
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