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BSC118N10NSG |
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| Part Number | BSC118N10NSG |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | BSC118N10NS G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID 1... |
| Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID 100 V 11.8 mΩ 71 A • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application PG-TDSON-8 • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type BSC118N10NS G Package PG-TDSON-8 Marking 118N10NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=2... |
| Document |
 BSC118N10NSG Data Sheet
PDF 435.64KB |
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Desde 2024. D4U Semiconductor.
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