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SPD30N03S2L-07G |
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| Part Number | SPD30N03S2L-07G |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche r... |
| Features |
ermal Characteristics Parameter
Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area 3)
Symbol
Values
Unit
min. typ. max.
RthJC RthJA RthJA
- 0.7 1.1 K/W - - 100
- - 75 - - 50
Electr. ical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
Gate threshold voltage, VGS = VDS
V(BR)DSS 30
-
VGS(th) 1.2 1.6
-V 2
ID=85µA
Zero gate voltage drain current... |
| Document |
 SPD30N03S2L-07G Data Sheet
PDF 584.52KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SPD30N03S2L-07 |
Infineon Technologies |
Power-Transistor |
|
| 2 | SPD30N03S2L-10 |
Infineon Technologies |
Power-Transistor |
|
| 3 | SPD30N03S2L-10G |
Infineon Technologies |
Power-Transistor |
|
| 4 | SPD30N03S2L-20 |
Infineon Technologies |
Power-Transistor |
|
| 5 | SPD30N03S2L-20G |
Infineon |
Power-Transistor |
|
| 6 | SPD30N03S2L |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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