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SPD30N03S2L-10G |
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| Part Number | SPD30N03S2L-10G |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operati... |
| Features |
2008
Thermal Characteristics Parameter
Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area 3)
SPD30N03S2L-10 G
Symbol
Values
Unit
min. typ. max.
RthJC RthJA RthJA
- 1 1.5 K/W - - 100
- - 75 - - 50
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS 30
-
-V
VGS=0V, ID=1mA
Gate threshold voltage, VGS = VDS
VGS(th) 1.2 1.6
2
ID=50µA
Zero ga... |
| Document |
 SPD30N03S2L-10G Data Sheet
PDF 582.82KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SPD30N03S2L-10 |
Infineon Technologies |
Power-Transistor |
|
| 2 | SPD30N03S2L-07 |
Infineon Technologies |
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|
| 3 | SPD30N03S2L-07G |
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Power-Transistor |
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| 4 | SPD30N03S2L-20 |
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|
| 5 | SPD30N03S2L-20G |
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| 6 | SPD30N03S2L |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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