APT97N65B2C6 |
Part Number | APT97N65B2C6 |
Manufacturer | Microsemi (https://www.microsemi.com/) |
Description | COOLMOS Power Semiconductors • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated APT97N65B2C6 APT97N65LC6 650V 97A 0.041Ω Super Ju... |
Features |
3 ( Id = 13.4A, Vdd = 50V )
650 97 62 291 ±20 862 -55 - to 150 260 13.4 2.96
Volts
Amps
Volts Watts
°C Amps
EAS Single Pulse Avalanche Energy ( Id = 13.4A, Vdd = 50V )
1954
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BV(DSS) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
650
RDS(on) Drain-Source On-State Resistance 4 (VGS = 10V, ID = 48.5A)
0.037 0.041
IDSS
Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V, TC = 150°C)
25 250
IGSS
Gate-Source Leakage Current (VGS = ±2... |
Document |
APT97N65B2C6 Data Sheet
PDF 140.70KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
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