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IXTM11N80 |
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| Part Number | IXTM11N80 |
| Manufacturer | IXYS |
| Description | MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V ID25 11 A 13 A RDS(on) 0.95 Ω 0.80 Ω Symbol Test Conditions Maximum Ratings VDSS VDGR VGS VGSM I D25... |
| Features |
q International standard packages
q Low R
HDMOSTM process
DS (on)
q Rugged polysilicon gate cell structure
q Low package inductance (< 5 nH)
- easy to drive and to protect
q Fast switching times
Symbol
V DSS
VGS(th) IGSS IDSS
R DS(on)
Test Conditions
Characteristic Values
(T J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V = 0 V, I = 3 mA GS D
VDS = VGS, ID = 250 µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS V =0V GS TJ = 25°C T J = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, 800 2 11N80 13N80 V 4.5 V ±100 nA 250 µA 1 mA 0.95 Ω 0.80 Ω Applications q ... |
| Document |
 IXTM11N80 Data Sheet
PDF 64.72KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXTM11N80 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IXTM10N100 |
IXYS Corporation |
MOSFET |
|
| 3 | IXTM12N100 |
IXYS Corporation |
MOSFET |
|
| 4 | IXTM12N90 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IXTM13N80 |
IXYS |
Power MOSFET |
|
| 6 | IXTM15N60 |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
|