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IXGR32N90B2D1 |
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| Part Number | IXGR32N90B2D1 |
| Manufacturer | IXYS |
| Description | Advance Technical Information HiPerFASTTM IGBT IXGR 32N90B2D1 with Fast Diode Electrically Isolated Base V I CES VC25 t CE(sat) fi typ = 900 V = 47 A = 2.9 V = 150 ns Symbol Test Conditions VCES... |
| Features |
ISOLATED TAB C = Collector
y Electrically isolated mounting tab y High frequency IGBT y High current handling capability y MOS Gate turn-on
- drive simplicity
Applications y PFC circuits y Uninterruptible power supplies (UPS) y Switched-mode and resonant-mode
power supplies y AC motor speed control y DC servo and robot drives y DC choppers
Advantages
y High power density y Very fast switching speeds for high
frequency applications
© 2005 IXYS All rights reserved
DS99457(12/05)
IXGR 32N90B2D1
Symbol
Test Conditions
Characteristic Values
(TJ
=
25OC
unless min.
otherwise specified) ... |
| Document |
 IXGR32N90B2D1 Data Sheet
PDF 193.84KB |
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Desde 2024. D4U Semiconductor.
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