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IXGN200N60A2 |
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| Part Number | IXGN200N60A2 |
| Manufacturer | IXYS |
| Description | IGBT Optimized for Switching up to 5 kHz IXGN 200N60A2 VCES IC25 VCE(sat) = 600 V = 200 A = 1.35 V Preliminary Data Sheet Symbol Test Conditions VCES VCGR TJ TJ VGES VGEM IC25 IC110 ICM SSO... |
| Features |
z International standard package
miniBLOC z Aluminium nitride isolation
- high power dissipation z Isolation voltage 3000 V~ z Very high current IGBT z Low VCE(sat) for minimum on-state
conduction losses z MOS Gate turn-on
- drive simplicity z Low collector-to-case capacitance
(< 50 pF) z Low package inductance (< 5 nH)
- easy to drive and to protect
Symbol
VGE(th) ICES IGES VCE(sat)
Test Conditions
IC = 1 mA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC110, VGE = 15 V
Characteristic Values (TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C TJ = 125°C
2.5 5.... |
| Document |
 IXGN200N60A2 Data Sheet
PDF 549.01KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXGN200N60A |
IXYS Corporation |
HiPerFAST IGBT |
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| 2 | IXGN200N60 |
IXYS Corporation |
HiPerFAST IGBT |
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| 3 | IXGN200N60B |
IXYS Corporation |
HiPerFASTTM IGBT |
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| 4 | IXGN100N170 |
IXYS |
High Voltage IGBT |
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| 5 | IXGN120N60A3 |
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| 6 | IXGN120N60A3D1 |
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IGBT |
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Desde 2024. D4U Semiconductor.
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