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TC58BVG1S3HTAI0 |
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| Part Number | TC58BVG1S3HTAI0 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | The TC58BVG1S3HTAI0 is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks. The ... |
| Features |
• Organization x8 Memory cell array 2112 × 128K × 8 Register 2112 × 8 Page size 2112 bytes Block size (128K + 4K) bytes • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read • Mode control Serial input/output Command control • Number of valid blocks Min 2008 blocks Max 2048 blocks • Power supply VCC = 2.7V to 3.6V • Access time Cell array to register 40 µs typ. (Single Page Read) / 55us typ. (Multi Page Read) Serial Read Cycle 25 ns min (CL=50pF) • Program/Erase time Auto Page Pro... |
| Document |
 TC58BVG1S3HTAI0 Data Sheet
PDF 683.01KB |
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Desde 2024. D4U Semiconductor.
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