TH58NVG4S0FTAK0 Toshiba 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

TH58NVG4S0FTAK0

Toshiba
TH58NVG4S0FTAK0
TH58NVG4S0FTAK0 TH58NVG4S0FTAK0
zoom Click to view a larger image
Part Number TH58NVG4S0FTAK0
Manufacturer Toshiba (https://www.toshiba.com/)
Description The TH58NVG4S0F is a single 3.3V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks. The ...
Features
• Organization x8 Memory cell array 4328 × 256K × 8 × 2 Register 4328 × 8 Page size 4328 bytes Block size (256K + 14.5K) bytes
• Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
• Mode control Serial input/output Command control
• Number of valid blocks Min 8032 blocks Max 8192 blocks
• Power supply VCC = 2.7V to 3.6V
• Access time Cell array to register 30 µs max Serial Read Cycle 25 ns min (CL=100pF)
• Program/Erase time Auto Page Program Auto Block Erase 300 µs/page typ. 3 ...

Document Datasheet TH58NVG4S0FTAK0 Data Sheet
PDF 935.63KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 TH58NVG4S0FTA20
Toshiba Semiconductor
16 GBIT (2G x 8 BIT) CMOS NAND E2PROM Datasheet
2 TH58NVG4S0FBAID
Toshiba
16 GBIT (2G x 8 BIT) CMOS NAND E2PROM Datasheet
3 TH58NVG4S0HTA20
Toshiba
16G-BIT (2G x 8 BIT) CMOS NAND E2PROM Datasheet
4 TH58NVG4S0HTAK0
Toshiba
16G-BIT (2G x 8 BIT) CMOS NAND E2PROM Datasheet
5 TH58NVG1S3AFT05
Toshiba Semiconductor
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Datasheet
6 TH58NVG2S3BTG00
Toshiba
4-Gbit CMOS NAND EPROM Datasheet
More datasheet from Toshiba
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad