TH58NVG3S0HTAI0 Toshiba 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM Datasheet. existencias, precio

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TH58NVG3S0HTAI0

Toshiba
TH58NVG3S0HTAI0
TH58NVG3S0HTAI0 TH58NVG3S0HTAI0
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Part Number TH58NVG3S0HTAI0
Manufacturer Toshiba (https://www.toshiba.com/)
Description The TH58NVG3S0HTAI0 is a single 3.3V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  256) bytes  64 pages  4096blocks. The...
Features
 Organization Memory cell array Register Page size Block size x8 4352  128K  8  2 4352  8 4352 bytes (256K  16K) bytes
 Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
 Mode control Serial input/output Command control
 Number of valid blocks Min 4016 blocks Max 4096 blocks
 Power supply VCC  2.7V to 3.6V
 Access time Cell array to register 25 s max Serial Read Cycle 25 ns min (CL=50pF)
 Program/Erase time Auto Page Program Auto Block Erase 300 s/page typ. 2.5 ms/blo...

Document Datasheet TH58NVG3S0HTAI0 Data Sheet
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