Busque con el número de pieza junto con el fabricante o la descripción
TC58BVG2S0HTA00 |
Click to view a larger image
| Part Number | TC58BVG2S0HTA00 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | The TC58BVG2S0HTA00 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks. The... |
| Features |
• Organization Memory cell array Register Page size Block size x8 4224 × 128K × 8 4224 × 8 4224 bytes (256K + 8K) bytes • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read • Mode control Serial input/output Command control • Number of valid blocks Min 2008 blocks Max 2048 blocks • Power supply VCC = 2.7V to 3.6V • Access time Cell array to register 55 µs typ. (Single Page Read) / 90µs typ. (Multi Page Read) Serial Read Cycle 25 ns min (CL=50pF) • Program/Erase time Auto Page Program ... |
| Document |
 TC58BVG2S0HTA00 Data Sheet
PDF 347.62KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TC58BVG2S0HTAI0 |
Toshiba |
4 GBIT (512M x 8 BIT) CMOS NAND E2PROM |
|
| 2 | TC58BVG2S0HBAI4 |
Toshiba |
4 GBIT (512M x 8 BIT) CMOS NAND E2PROM |
|
| 3 | TC58BVG2S0HBAI6 |
Toshiba |
4G-BIT (512M x 8 BIT) CMOS NAND E2PROM |
|
| 4 | TC58BVG0S3HBAI4 |
Toshiba |
1 GBIT (128M x 8 BIT) CMOS NAND E2PROM |
|
| 5 | TC58BVG0S3HBAI6 |
Toshiba |
1G-BIT (128M x 8 BIT) CMOS NAND E2PROM |
|
| 6 | TC58BVG0S3HTA00 |
Toshiba |
1 GBIT (128M x 8 BIT) CMOS NAND E2PROM |
|
Desde 2024. D4U Semiconductor.
|