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IRF1404LPbF |
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| Part Number | IRF1404LPbF |
| Manufacturer | International Rectifier |
| Description | Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fa... |
| Features |
n dissipate up
to 2.0W in a typical surface mount application. The through-hole version (IRF1404L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation
Power Dissipation
Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
TJ TSTG
Operating Junction and Storage Tem... |
| Document |
 IRF1404LPbF Data Sheet
PDF 263.58KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF1404L |
International Rectifier |
Power MOSFET |
|
| 2 | IRF1404 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | IRF1404 |
International Rectifier |
Power MOSFET |
|
| 4 | IRF1404PbF |
International Rectifier |
HEXFET Power MOSFET |
|
| 5 | IRF1404S |
International Rectifier |
Power MOSFET |
|
| 6 | IRF1404S |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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