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CEM3317 |
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| Part Number | CEM3317 |
| Manufacturer | CET |
| Description | CEM3317 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -6.2A, RDS(ON) = 33mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. -30V, -4.9A, RDS(ON) = 52mΩ @VGS = -10V. RDS(O... |
| Features |
-30V, -6.2A, RDS(ON) = 33mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V.
-30V, -4.9A, RDS(ON) = 52mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
1
D1 D1 D2 D2 876 5
123 4 S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Channel 1
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS -30
VGS ±20
ID -6.2 IDM -25
Channel 2 -30
±20
-4.9 -20
Maximum Power Dissi... |
| Document |
 CEM3317 Data Sheet
PDF 426.23KB |
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Desde 2024. D4U Semiconductor.
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