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CEM2163 |
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| Part Number | CEM2163 |
| Manufacturer | CET |
| Description | CEM2163 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -8.9A, RDS(ON) = 20mΩ @VGS = -4.5V. RDS(ON) = 30mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High... |
| Features |
-20V, -8.9A, RDS(ON) = 20mΩ @VGS = -4.5V. RDS(ON) = 30mΩ @VGS = -2.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
DD D D 8 7 65
SO-8
1
1 234 S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS -20
VGS ±12
ID -8.9 IDM -36
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter T... |
| Document |
 CEM2163 Data Sheet
PDF 244.79KB |
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Desde 2024. D4U Semiconductor.
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