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MDP12N50B |
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| Part Number | MDP12N50B |
| Manufacturer | MagnaChip |
| Description | The MDP/F12N50B uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP/F12N50B is suitable device for SMPS, high Spe... |
| Features |
VDS = 500V ID = 11.5A RDS(ON) ≤ 0.65Ω
@VGS = 10V @VGS = 10V
Applications
Power Supply PFC Ballast
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Symbol VDSS VGSS
ID
IDM
PD
EAR dv/dt EAS TJ, Tstg
MDP12N50B MDF12N50B 500 ±30
11.5 11.5* 7.0 7.0* 46 46* 165 4... |
| Document |
 MDP12N50B Data Sheet
PDF 1.12MB |
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Desde 2024. D4U Semiconductor.
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