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CEP3100 |
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| Part Number | CEP3100 |
| Manufacturer | CET |
| Description | CEP3100 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 47A,RDS(ON) = 12mΩ @VGS = 10V. RDS(ON) = 21mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON... |
| Features |
30V, 47A,RDS(ON) = 12mΩ @VGS = 10V. RDS(ON) = 21mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 package.
G D S
CEP SERIES TO-220
D
G S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@ TC = 25 C @ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
VDS VGS ID
IDM PD
30
±20
47
33 188 48 0.32
Operating and Store Temperature Range
TJ,Tstg
-55... |
| Document |
 CEP3100 Data Sheet
PDF 402.60KB |
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Desde 2024. D4U Semiconductor.
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