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CEP13N10L |
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| Part Number | CEP13N10L |
| Manufacturer | CET |
| Description | CEP13N10L/CEB13N10L N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS(ON) = 175mΩ @VGS = 10V. RDS(ON) = 185mΩ @VGS = 5V. Super high dense cell design for extremely low RDS... |
| Features |
100V, 12.8A, RDS(ON) = 175mΩ @VGS = 10V. RDS(ON) = 185mΩ @VGS = 5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C Drain Current-Continuous @ TC = 100 C Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
VDS VGS ID
IDM PD
100
±20... |
| Document |
 CEP13N10L Data Sheet
PDF 345.33KB |
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