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CS4N65FA9HD |
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| Part Number | CS4N65FA9HD |
| Manufacturer | HUAJING |
| Description | CS4N65FA9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche ... |
| Features |
z Fast Switching
z ESD Improved Capability
z Low Gate Charge (Typical Data: 13nC)
z Low Reverse transfer capacitances(Typical: 4.2pF)
z 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Energy ,Repetitive Avalanche Current Peak Diode Recovery dv/dt Power Dis... |
| Document |
 CS4N65FA9HD Data Sheet
PDF 233.94KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | CS4N65FA9R |
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| 2 | CS4N65FA9R-G |
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| 3 | CS4N65A3HD |
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| 4 | CS4N65A3HDY |
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| 5 | CS4N65A3R |
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| 6 | CS4N65A3TDY |
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|
Desde 2024. D4U Semiconductor.
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