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F60UP20DN |
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| Part Number | F60UP20DN |
| Manufacturer | Thinki Semiconductor |
| Description | F60UP20DN using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic. ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified Symbol Parameter... |
| Features |
M
RMS Forward Current Non-Repetitive Surge Forward Current
TC=100°C, Per Diode TJ=45°C, t=10ms, 50Hz, Sine
53 300
A A
PD Power Dissipation
156 W
TJ Junction Temperature
-40 to +150
°C
T STG Torque
Storage Temperature Range Module-to-Sink
Recommended（M3）
-40 to +150 1.1
°C N ·m R θJC Thermal Resistance Weight ELECTRICAL CHARACTERISTICS Junction-to-Case 0.8 °C /W 6.0 g TC=25°C unless otherwise specified Symbol Parameter IRM Reverse Leakage Current Test Conditions VR=200V VR=200V, TJ=125°C Min. Typ. Max. -- -- 25 -- -- 250 Unit µA µA VF Forward Voltage I F =30A IF=30A, ... |
| Document |
 F60UP20DN Data Sheet
PDF 708.00KB |
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