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RF1S9530SM |
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| Part Number | RF1S9530SM |
| Manufacturer | Fairchild Semiconductor |
| Description | Data Sheet IRF9530, RF1S9530SM January 2002 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOS... |
| Features |
• 12A, 100V • rDS(ON) = 0.300Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE JEDEC TO-263A GATE SOURCE DRAIN (FLANGE) ©2002 Fairchild Semiconductor Corporation IRF9530, RF1S9530SM Rev. B IRF9530, RF1S9530SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Breakdown Voltage (N... |
| Document |
 RF1S9530SM Data Sheet
PDF 109.61KB |
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