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CED02N9 |
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| Part Number | CED02N9 |
| Manufacturer | CET |
| Description | CED02N9/CEU02N9 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 900V, 2A, RDS(ON) = 6.8Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and c... |
| Features |
900V, 2A, RDS(ON) = 6.8Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
900
±30
2 8 75 0.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
The... |
| Document |
 CED02N9 Data Sheet
PDF 370.49KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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