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FSGYE230R |
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| Part Number | FSGYE230R |
| Manufacturer | Intersil Corporation |
| Description | FSGYE230R TM Data Sheet May 2000 File Number 4853.1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high perform... |
| Features |
• 12A, 200V, rDS(ON) = 0.150Ω • UIS Rated • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 5V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IAS • Photo Current - 3.0nA Per-RAD (Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 The Intersil family of Star*Power FETs includes a series of devices in v... |
| Document |
 FSGYE230R Data Sheet
PDF 81.82KB |
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