IRFZ44NLPBF |
Part Number | IRFZ44NLPBF |
Manufacturer | International Rectifier |
Description | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi... |
Features |
IRFZ44NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation
Power Dissipation
Linear Derating Factor
VGS IAR EAR dv/dt
Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
TJ TSTG
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC RθJA
Parameter Junction-to-Case Junction-to-Amb... |
Document |
IRFZ44NLPBF Data Sheet
PDF 324.05KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRFZ44NL |
International Rectifier |
Power MOSFET | |
2 | IRFZ44N |
International Rectifier |
Power MOSFET | |
3 | IRFZ44N |
NXP |
N-Channel MOSFET | |
4 | IRFZ44N |
INCHANGE |
N-Channel MOSFET Transistor | |
5 | IRFZ44NPBF |
International Rectifier |
Power MOSFET | |
6 | IRFZ44NS |
NXP |
N-Channel MOSFET |