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11NM65N |
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| Part Number | 11NM65N |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | * 6 $0Y These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the com... |
| Features |
Order codes
VDSS @ TJmax
RDS(on) max
ID
STD11NM65N STF11NM65N STFI11NM65N STP11NM65N
710 V < 0.455 Ω 11 A
• 100% avalanche tested • Low input capacitance and gate charge • low gate input resistance Figure 1. Internal schematic diagram ' Ć7$% Applications • Switching applications Description * 6 $0Y These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is ther... |
| Document |
 11NM65N Data Sheet
PDF 627.38KB |
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Desde 2024. D4U Semiconductor.
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