KHB9D0N90NA |
Part Number | KHB9D0N90NA |
Manufacturer | KEC |
Description | This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ball... |
Features |
VDSS(Min.)= 900V, ID= 9A Drain-Source ON Resistance : RDS(ON)=1.05(Typ.) @VGS =10V Qg(typ.) =54nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@TC=25 Pulsed
(Note1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power Dissipation
Tc=25 Derate above25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
SYMBOL RATING
VDSS... |
Document |
KHB9D0N90NA Data Sheet
PDF 608.62KB |
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