IRLU2703PBF |
Part Number | IRLU2703PBF |
Manufacturer | International Rectifier |
Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switchi... |
Features |
tings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS EAS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max. 23
16 96 45 0.30 ± 16 77 14 4.5 5.0 -55 to + 175
300 (1.6mm from case )
Thermal Resistance
Parameter
Typ.
RθJC
Junction-to-Case
– – – RθJ... |
Document |
IRLU2703PBF Data Sheet
PDF 313.74KB |
Similar Datasheet
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