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TH58NVG3D4BTG00 |
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| Part Number | TH58NVG3D4BTG00 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | The TH58NVG3D4B is a single 3.3 V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 128 pages × 4096blocks. The d... |
| Features |
• Organization Memory cell array Register Page size Block size TH58NVG3D4B 2112 × 256K × 8 × 2 2112 × 8 2112 bytes (256K + 8K) bytes • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read • Mode control Serial input/output Command control • Number of valid blocks Max 4096 blocks Min 3936 blocks • Power supply VCC = 2.7 V to 3.6 V • Program/Erase Cycles 10000 Cycles (With 4bit/528Byte ECC) • Access time Cell array to register 50 µs max Serial Read Cycle 50 ns min • Program/Erase time Auto Page Program Auto Block Erase 800 µs/page typ. 3 ms/block typ. • Operating curr... |
| Document |
 TH58NVG3D4BTG00 Data Sheet
PDF 306.07KB |
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