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FQD3N60C |
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| Part Number | FQD3N60C |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• 2.4A, 600V, RDS(on) = 3.4Ω @VGS = 10 V • Low gate charge ( typical 10.5 nC) • Low Crss ( typical 5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability January 2006 QFET TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency swit... |
| Document |
 FQD3N60C Data Sheet
PDF 753.92KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQD3N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 2 | FQD3N25 |
Fairchild Semiconductor |
250V N-Channel MOSFET |
|
| 3 | FQD3N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET |
|
| 4 | FQD3N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
| 5 | FQD3N50C |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 6 | FQD3N80 |
OuCan |
N-Channel MOSFET |
|
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